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Si4404DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0065 at V GS = 10 V
0.008 at V GS = 4.5 V
SO-8
I D (A)
23
17
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g Tested
D
S
S
1
2
8
7
D
D
S
G
3
4
6
5
D
D
G
Top V ie w
S
Orderin g Information: Si4404DY-T1-E3 (Lead (P b )-free)
Si4404DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current (10 μs Pulse Width)
T A = 25 °C
T A = 70 °C
I D
I DM
23
19
60
15
12
A
Continuous Source Current (Diode Conduction) a
I S
2.9
1.3
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
2.2
- 55 to 150
1.6
1
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
29
67
13
35
80
16
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71247
S09-0228-Rev. H, 09-Feb-09
www.vishay.com
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